reverse v oltage: 20 to 150 v olts forward current: 1.0 amp rohs device d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) cdbm120-g thru. cdbm1 150-g page 1 qw -bb005 smd schottky barrier rectifiers rev :d comchip t echnology co., l td. mini sma/sod-123 0.154(3.90) 0.138(3.50) 0.012(0.30) t yp. 0.071(1.80) 0.055(1.40) 0.122(2.80) 0.096(2.40) 0.067(1.70) 0.051(1.30) 0.035(0.90) t yp. 0.035(0.90) t yp. un it cdbm cdbm 160-g cdbm 180-g cdbm 1 150-g 14 20 30 21 30 60 42 60 30 0.5 10 98 120 80 56 80 150 105 150 130-g pa ra m et er sy m bo l cdbm 120-g 20 cdbm 1 100-g 100 70 100 cdbm 28 40 50 35 50 150-g cdbm 140-g 40 repetitive peak reverse voltage maximum rms voltage continuous reverse voltage maximum forward voltage @i f =1.0a forward rectified current v rrm v rms v r v f i o 0.70 0.50 0.85 0.92 1.0 forward surge current, 8.3ms half sine wave superimposed on rated load (jedec method) t yp. thermal resistance, junction to ambient air t yp. diode junction capacitance (note 1) operating junction temperature storage temperature i fsm i r r ja c j t j t stg reverse current on v r =v rrm @t a =25 c @t a =125 c note 1: f=1mhz and applied 4v dc reverse voltage. -55 to +125 -55 to +150 -65 to +175 v v v v a a ma pf o c o c o c/w maximum ratings (at t a =25c unless otherwise noted) features - batch process design, excellent powe mechanical data molded plastic, jedec mini sma/sod-123. -w eight:0.027 gram(approx.). dissipation of fers better reverse leakage current and thermal resistance. -low profile surface mounted application in order to optimize board space. -t iny plastic smd package. -low power loss, high ef ficiency . -high current capability , low forward voltage dorp. -high surge capability . -guardring for overvoltage protection. -ultra high-speed switching. -silicon epitaxial planarchip, metal silicon junction. -lead-free parts meet environmental standards of mil-std-19500 /228 -case: -t erminals: solde plated, solderable per mil-std-750, method 2026. -polarity: indicated by cathode band. -mounting position: any
page 2 qw -bb005 rev :d comchip t echnology co., l td. rating and characteristic curves (cdbm120-g thru. cdbm1 150-g) fig.2 forward characteristics f , f o r w a r d c u r r e n t ( a ) v f , forward v oltage (v) 0 . 1 fig.1 reverse characteristics i r , r e v e r s e c u r r e n t ( m a ) percent of rated peak reverse v oltage (%) 0 1 2 0 2 0 0 fig.3 junction capacitance 0 c j , j u n c t i o n c a p a c i t a n c e ( p f ) v r , reverse v oltage (v) 1 5 0 3 5 0 0 . 0 1 1 0 . 0 1 1 0 1 0 0 2 . 1 1 0 0 fig.4 current derating curve 0 i o , a v e r a g e f o r w a r d c u r r e n t ( a ) t a , ambient t emperature (c) 0 . 8 1 . 4 0 . 6 0 . 1 2 0 1 6 0 1 0 0 0 . 0 1 1 1 0 1 0 0 0 . 1 0 . 5 0 . 2 1 . 3 1 . 7 5 0 2 0 0 3 0 0 0 . 4 4 0 8 0 1 6 0 1 6 0 1 2 0 1 . 0 1 . 2 o t j =75 c o t j =25 c 0 . 9 cdbm120-g~140-g 0 . 1 1 0 1 0 0 2 5 0 f=1mhz applied 4vdc reverse voltage 1 4 0 4 0 8 0 fig.5 non-repetitive forward surge current 0 i f s m , p e a k f o r w a r d s u r g e c u r r e n t ( a ) number of cycles at 60hz 3 0 1 1 0 1 0 0 1 2 2 4 6 1 8 o t j =25 c 8.3ms single half sine wave, jedec method cdbm150-g~160-g cdbm180-g~1 150-g d b m 1 2 0 - g ~ 1 4 0 g c - c d b m 1 5 0 - g ~ 1 1 5 0 - g smd schottky barrier rectifiers
page 3 rev :d comchip t echnology co., l td. smd schottky barrier rectifiers qw -bb005 b c d d d 2 d 1 m i n i - s m a / s o d - 1 2 3 s y m b o l a ( m m ) ( i n c h ) 2 . 4 4 0 m i n . 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 6 2 . 0 m i n . 1 3 . 0 0 . 5 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 8 . 0 0 0 . 3 0 1 4 . 4 0 . 1 0 1 7 8 2 . 0 0 0 . 0 5 9 0 . 0 0 4 7 . 0 0 0 . 0 7 9 0 . 5 1 2 0 . 0 2 0 s y m b o l ( m m ) ( i n c h ) 0 . 3 1 5 0 . 0 1 1 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 5 6 7 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 6 8 9 0 . 0 0 4 3 . 5 0 0 . 1 0 0 . 1 3 8 0 . 0 0 4 m i n i - s m a / s o d - 1 2 3 1 . 9 0 0 . 1 0 0 . 0 7 5 0 . 0 4 3 . 9 0 0 . 1 0 0 . 1 5 3 0 . 0 4 1 . 6 8 0 . 1 0 0 . 0 6 6 0 . 0 4 0 . 2 3 0 . 1 0 0 . 0 0 9 0 . 0 0 4 t reel t aping specification o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start t c direction of feed i n d e x h o l e d e f b w p p 0 p 1 a d 1 d 2 d w 1
suggested p ad layout park number 12 marking code marking code a b c e d cdbm120-g xxx page 4 rev :d comchip t echnology co., l td. smd schottky barrier rectifiers qw -bb005 cdbm140-g cdbm180-g cdbm1 100-g 14 18 10 size (inch) 0.130 (mm) 3.30 1.40 1.90 0.055 0.075 5.70 0.225 e 1.90 0.075 b c d a m i n i - s m a / s o d - 1 2 3 cdbm160-g 16 cdbm150-g 15 cdbm130-g 13 cdbm1 150-g 1 15 xxx = product type marking code cathod band standard packaging c a s e t y p e 2 , 5 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k m i n i - s m a / s o d - 1 2 3
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